ni junction
英 [ˌen ˈaɪ ˈdʒʌŋkʃn]
美 [ˌen ˈaɪ ˈdʒʌŋkʃn]
【电】NI接头
双语例句
- The samples of the Ni 80 Fe 20/ Al 2O 3/ Ni 80 Fe 20 magnetic tunnel junction were prepared with the ion beam sputtering and magnetron sputtering technique. The analysis of The relationship between TMR and insulating barrier.
采用离子束和磁控溅射技术制备了Ni80Fe20/Al2O3/Ni80Fe20磁性隧道结样品，主要研究了中间绝缘层对隧道结磁电阻效应的影响。 - The solid state reaction of ultra-thin nickel film on both n+/ p and p+/ n junction substrates has been investigated in low temperature range. The film composition, structure and properties of the formed nickel silicide are characterized.
论文系统研究了超薄Ni膜在重掺杂n+/p和p+/n浅结型硅衬底上、低温范围内Ni/Si固相反应规律，分析了硅化镍薄膜的组分、结构和特性的变化及其原因。 - The heat-reaction characteristics of Ni/ Si and TiN/ Ni/ Si structure and the regularity for forming the NiSi film have been studied deeply and formed the excellent Ni-salicide shallow junction diode.
文中对Ni／Si和TiN／Ni／Si的热反应特性以及NiSi薄膜的形成规律进行了详细的研究。制备了优质的Ni硅化物浅结二极管。 - In chapter ⅴ, we investigated the spin-polarized transport and tunneling magne-toresistance ( TMR) effect of molecular junction of OBP molecule with semi-infinite Ni electrodes, and gave the primary results.
第五章对oligoyne-bipyridyl（OBP）分子两端连接半无限Ni电极的分子结体系的自旋极化输运及隧道磁阻效应进行了研究，给出了计算得到的初步结果。 - EDS analysis shows that with the metal ion concentration ratio increase, the Co content is increasing and the Ni and P content are decreasing in plating. And P elements tend to segregate in the junction of one cell connected with another cell.
能谱分析表明，随金属离子浓度比的增加，镀层中Co含量不断增加，而Ni和P含量不断减少，且P元素倾向于偏聚在胞与胞相连的交界处。 - The system hardware includes NI 6024E DAQ card, junction box, and testing circuit.
系统硬件包括NI6024E数据采集卡，接线盒，外围测试电路和PC机。